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Showing items 31-44 of 44 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:11:24Z |
Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions
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Yang, H. J.; Cheng, C. F.; Chen, W. B.; Lin, S. H.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:11:13Z |
Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers
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Lin, S. H.; Yang, H. J.; Chen, W. B.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:11:06Z |
High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
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Cheng, C. H.; Lin, S. H.; Jhou, K. Y.; Chen, W. J.; Chou, C. P.; Yeh, F. S.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P. |
| 國立交通大學 |
2014-12-08T15:10:16Z |
Low-V(t) TaN/HfLaO n-MOSFETs Using Low-Temperature Formed Source-Drain Junctions
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Lin, S. H.; Liu, S. L.; Yeh, F. S.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:09:23Z |
Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions
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Lin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:09:13Z |
High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators
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Lin, S. H.; Chiang, K. C.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2014-12-08T15:08:49Z |
Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT
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Lin, S. H.; Cheng, C. H.; Chen, W. B.; Yeh, F. S.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:08:08Z |
Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics
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Lin, S. H.; Chiang, K. C.; Yeh, F. S.; Chin, Albert |
| 國立交通大學 |
2014-12-08T15:07:53Z |
High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment
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Cheng, C. H.; Hsu, H. H.; Hsieh, I. J.; Deng, C. K.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2014-12-08T15:07:53Z |
A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitor
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Cheng, C. H.; Huang, C. C.; Hsu, H. H.; Chen, P. C.; Chiang, K. C.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2014-12-08T15:07:53Z |
Characteristics of Cerium Oxide for Metal-Insulator-Metal Capacitors
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Cheng, C. H.; Hsu, H. H.; Chen, W. B.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2014-12-08T15:07:52Z |
Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors
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Cheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S. |
| 國立交通大學 |
2014-12-08T15:06:45Z |
Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors
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Cheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S. |
| 國立成功大學 |
2009-07 |
Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
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Chin, Albert; Chang, M. F.; Lin, S. H.; Chen, W. B.; Lee, P. T.; Yeh, F. S.; Liao, Chi-Chang; Li, M. F.; Su, N. C.; Wang, Shui-Jinn |
Showing items 31-44 of 44 (1 Page(s) Totally)
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