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Showing items 21-45 of 79 (4 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:12Z |
Logic/Memory Hybrid 3D Sequentially Integrated Circuit Using Low Thermal Budget Laser Process
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Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Wu, Tsung-Ta; Wang, Hsing-Hsiang; Shen, Chang-Hong; Kao, Ming-Hsuan; Yeh, Wen-Kuan; Chang, Meng-Fan; Wu, Meng-Chyi; Shieh, Jia-Min |
| 國立交通大學 |
2017-04-21T06:49:09Z |
a-SiGeC Thin Film Photovoltaic Enabled Self-Power Monolithic 3D IC Under Indoor Illumination
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Kao, Ming-Hsuan; Yang, Chih-Chao; Wu, Tsung-Ta; Hsieh, Tung-Ying; Huang, Wen-Hsieh; Wang, Hsing-Hsiang; Shen, Chang-Hong; Yeh, Wen-Kuan; Chang, Meng-Fan; Shieh, Jia-Min |
| 國立交通大學 |
2017-04-21T06:48:48Z |
3D-TCAD Simulation Study of the Contact All Around T-FinFET Structure for 10nm Metal-Oxide-Semiconductor Field-Effect Transistor
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Chou, Chen-Han; Hsu, Chung-Chun; Yeh, Wen-Kuan; Chung, Steve S.; Chien, Chao-Hsin |
| 國立交通大學 |
2017-04-21T06:48:46Z |
Suspended Ge Gate-All-Around Nanowire nFETs with Junction Isolation on Bulk Si
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Wan, Chia-Chen; Luo, Guang-Li; Hsu, Shu-Han; Hung, Kuo-Dong; Chu, Chun-Lin; Hou, Tuo-Hung; Su, Chun-Jun; Chen, Szu-Hung; Wu, Wen-Fa; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology
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Lee, Yao-Jen; Hou, Fu-Ju; Chuang, Shang-Shiun; Hsueh, Fu-Kuo; Kao, Kuo-Hsing; Sung, Po-Jung; Yuan, Wei-You; Yao, Jay-Yi; Lu, Yu-Chi; Lin, Kun-Lin; Wu, Chien-Ting; Chen, Hisu-Chih; Chen, Bo-Yuan; Huang, Guo-Wei; Chen, Henry J. H.; Li, Jiun-Yun; Li, Yiming; Samukawa, Seiji; Chao, Tien-Sheng; Tseng, Tseung-Yuen; Wu, Wen-Fa; Hou, Tuo-Hung; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:19Z |
High Performance Poly Si Junctionless Transistors with Sub-5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing for 3D Stacked ICs Applications
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Lee, Yao-Jen; Cho, Ta-Chun; Sung, Po-Jung; Kao, Kuo-Hsing; Hsueh, Fu-Kuo; Hou, Fu-Ju; Chen, Po-Cheng; Chen, Hsiu-Chih; Wu, Chien-Ting; Hsu, Shu-Han; Chen, Yi-Ju; Huang, Yao-Ming; Hou, Yun-Fang; Huang, Wen-Hsien; Yang, Chih-Chao; Chen, Bo-Yuan; Lin, Kun-Lin; Chen, Min-Cheng; Shen, Chang-Hong; Huang, Guo-Wei; Huang, Kun-Ping; Current, Michael I.; Li, Yiming; Samukawa, Seiji; Wu, Wen-Fa; Shieh, Jia-Min; Chao, Tien-Sheng; Yeh, Wen-Kuan |
| 國立交通大學 |
2017-04-21T06:48:18Z |
TMD FinFET with 4 nm Thin Body and Back Gate Control for Future Low Power Technology
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Chen, Min-Cheng; Li, Kai-Shin; Li, Lain-Jong; Lu, Ang-Yu; Li, Ming-Yang; Chang, Yung-Huang; Lin, Chang-Hsien; Chen, Yi-Ju; Hou, Yun-Fang; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Shieh, Jia-Min; Yeh, Wen-Kuan; Shih, Jyun-Hong; Su, Po-Cheng; Sachid, Angada B.; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming |
| 國立成功大學 |
2016-12 |
Microstructure and piezoelectric properties of reactively sputtered highly C-axis ScxAl1-xN thin films on diamond-like carbon/Si substrate
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Liauh, Woan Jwu; Wu, Sean; Huang, Jow-Lay; Lii, Ding-Fwu; Lin, Zhi-Xun; Yeh, Wen-Kuan |
| 國立成功大學 |
2016-04-29 |
Microstructure and Piezoelectric Properties of Reactively Sputtered Highly C-axis ScxAl1-xN Thin Films on Diamond-Like Carbon/Si Substrate
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Liauh, Woan-Jwu; Wu, Sean; Huang, Jow-Lay; Lii, Ding-Fwu; Lin, Zhi-Xun; Yeh, Wen-Kuan |
| 國立交通大學 |
2014-12-08T15:23:37Z |
Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability
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Yuan, Jiann-Shiun; Yen, Hsuan-Der; Chen, Shuyu; Wang, Ruey-Lue; Huang, Guo-Wei; Juang, Ying-Zong; Tu, Chih-Ho; Yeh, Wen-Kuan; Ma, Jun |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Effect of NH(3) Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
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Chen, Yu-Ting; Chen, Kun-Ming; Lin, Cheng-Li; Yeh, Wen-Kuan; Huang, Guo-Wei; Lai, Chien-Ming; Chen, Yi-Wen; Hsu, Che-Hua; Huang, Fon-Shan |
| 國立高雄大學 |
2011-03 |
The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
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Yeh, Wen-Kuan; Chen, Yu-Ting; Huang, Fon-Shan; Hsu, Chia-Wei; Chen, Chun-Yu; Fang, Yean-Kuen; Gan, Kwang-Jow; Chen, Po-Ying |
| 國立成功大學 |
2011-03 |
The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
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Yeh, Wen-Kuan; Chen, Yu-Ting; Huang, Fon-Shan; Hsu, Chia-Wei; Chen, Chun-Yu; Fang, Yean-Kuen; Gan, Kwang-Jow; Chen, Po-Ying |
| 國立高雄大學 |
2011 |
NBTI reliability on high-k metal-gate SiGe transistor and circuit performances
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Yuan, Jiann-Shiun; Yeh, Wen-Kuan; Chen, Shuyu; Hsu, Chia-Wei |
| 國立高雄大學 |
2011 |
Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET
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Lin, Cheng-Li; Yeh, Wen-Kuan |
| 國立高雄大學 |
2010-08 |
External Stresses on Tensile and Compressive Contact Etching Stop Layer SOI MOSFETs
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Chang, Wen-Teng; Wang, Chih-Chung; Lin, Jian-An; Yeh, Wen-Kuan |
| 國立高雄大學 |
2010-02 |
The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET
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Lin, Cheng-Li; Chen, Yu-Ting; Huang, Fon-Shan; Yeh, Wen-Kuan; Lin, Chien-Ting |
| 國立高雄大學 |
2010 |
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing
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Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Chen, Chun-Yu; Chiang, Yen-Ting; Juang, Feng-Renn; Lin, Chien-Ting; Lai, Chien-Ming |
| 國立高雄大學 |
2009-07 |
Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs
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Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Chen, Chun-Yu; Lin, Chien-Ting; Hsu, Che-Hua; Cheng, Li-Wei; Lai, Chien-Ming |
| 國立成功大學 |
2009-07 |
Effect of Nitrogen Incorporation in a Gd Cap Layer on the Reliability of Deep-Submicrometer Hf-Based High-k/Metal-Gate nMOSFETs
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Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Chen, Chun-Yu; Lin, Chien-Ting; Hsu, Che-Hua; Cheng, Li-Wei; Lai, Chien-Ming |
| 國立高雄大學 |
2009-03 |
The Impact of Strain Technology on FUSI Gate SOI CMOSFET
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Yeh, Wen-Kuan; Wang, Jean-An; Tsai, Ming-Hsing; Lin, Chien-Ting; Chen, Po-Ying |
| 國立成功大學 |
2008-11 |
Significantly improving sub-90 nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer
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Hsu, Chia-Wei; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lin, Chien-Ting |
| 國立高雄大學 |
2008-10 |
Significant improvement of 45 nm and beyond complementary metal oxide semiconductor field effect transistor performance with fully silicided and ultimate spacer process technology
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Hsu, Chia-Wei; Fang, Yean-Kuen; Lin, Chien-Ting; Yeh, Wen-Kuan; Hsu, Che-Hua; Lai, Chieh-Ming; Cheng, Li-Wei; Ma, Mike |
| 國立成功大學 |
2008-09-01 |
Significant improvement of 45 nm and beyond complementary metal oxide semiconductor field effect transistor performance with fully silicided and ultimate spacer process technology
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Hsu, Chia-Wei; Fang, Yean-Kuen; Lin, Chien-Ting; Yeh, Wen-Kuan; Hsu, Che-Hua; Lai, Chieh-Ming; Cheng, Li-Wei; Ma, Mike |
| 國立成功大學 |
2008-08 |
A high current gain gate-controlled lateral bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications
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Chen, Shuo-Mao; Fang, Yean-Kuen; Yeh, Wen-Kuan; Lee, I. C.; Chiang, Yen-Ting |
Showing items 21-45 of 79 (4 Page(s) Totally)
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