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Showing items 41-49 of 49  (1 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2001-08 MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming
國立成功大學 2001-08 A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior Liu, Wen-Chau; Wang, Wei-Chou; Yen, Chih-Hung; Cheng, Chin-Chuan; Wu, Cheng-Zu; Chiou, Wen-Hui; Chuen, C. Y.
國立成功大學 2001-08 On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung
國立成功大學 2001-05 Characteristics of delta-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs) Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Pan1, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2001-02 Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Lour, Wen-Shiung; Liu, Wen-Chau
國立成功大學 2000-11 Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors Yen, Chih-Hung; Lin, Kuan-Po; Yu, Kuo-Hui; Chang, Wen-Lung; Lin, Kun-Wei; Liu, Wen-Chau
國立成功大學 2000-10-26 InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau
國立成功大學 2000-06 Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure Lin, Kuan-Po; Yen, Chih-Hung; Chang, Wen-Lung; Yu, Kuo-Hui; Lin, Kun-Wei; Liu, Wen-Chau
東海大學 1997 均勻著色在三部圖之研究 嚴志弘; Yen, Chih-Hung

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