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"yen chih hung"的相關文件
顯示項目 26-49 / 49 (共2頁)
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| 國立成功大學 |
2006 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2004-12 |
Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs
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Chen, Chun-Yuan; Fu, Ssu-I; Cheng, Shiou-Ying; Chang, Chi-Yuan; Tsai, Chien-Hung; Yen, Chih-Hung; Tsai, Sheng-Fu; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2004-11 |
Characteristics of an InP-InGaAs-InGaAsPHBT
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Chen, Jing-Yuh; Cheng, Shiou-Ying; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Fu, Ssu-Yi; Tsai, Sheng-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2004-11 |
Temperature-dependent dc characteristics of an InGaAs/InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure
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Chen, Jing-Yuh; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Tsai, Sheng-Fu; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Chuang, Hung-Ming; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2004-03 |
Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with doping concentrations of AlxGa1-xAs graded layers
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Cheng, Shiou-Ying; Chen, Jing-Yuh; Chen, Chun-Yuan; Chuan, Hung-Ming; Yen, Chih-Hung; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2004-01 |
Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Lai, Po-Hsien; Liao, Xin-Da; Chen, Chun-Yuan; Yen, Chih-Hung; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2003-04 |
Dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Rong-Chau; Yen, Chih-Hung; Chen, Jing-Yuh; Cheng, Chin-Chuan;; Liu, Wen-Chau |
| 國立成功大學 |
2003-01 |
Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
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Chen, Chun-Yuan; Chiou, Wen-Huei; Yen, Chih-Hung; Chuang, Hung-Ming; Chen, Jing-Yuh; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2002-05 |
Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Wang, Ckih-Kai; Liu, Wen-Chau |
| 國立成功大學 |
2001-12 |
Investigation of temperature-dependent characteristics of an n(+)-InGaAs/n-GaAs composite doped channel HFET
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Thei, Kong-Beng |
| 國立成功大學 |
2001-08-13 |
Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Yen, Chih-Hung; Lin, Kuan-Po; Wu, Cheng-Zu; Chiou, Wen-Hui; Chen, Chin-Ying |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior
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Liu, Wen-Chau; Wang, Wei-Chou; Yen, Chih-Hung; Cheng, Chin-Chuan; Wu, Cheng-Zu; Chiou, Wen-Hui; Chuen, C. Y. |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-05 |
Characteristics of delta-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)
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Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Pan1, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-02 |
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
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Yen, Chih-Hung; Lin, Kuan-Po; Yu, Kuo-Hui; Chang, Wen-Lung; Lin, Kun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2000-10-26 |
InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-06 |
Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure
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Lin, Kuan-Po; Yen, Chih-Hung; Chang, Wen-Lung; Yu, Kuo-Hui; Lin, Kun-Wei; Liu, Wen-Chau |
| 東海大學 |
1997 |
均勻著色在三部圖之研究
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嚴志弘; Yen, Chih-Hung |
顯示項目 26-49 / 49 (共2頁)
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