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國立交通大學 |
2014-12-08T15:16:30Z |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
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Wu, CH; Hung, BF; Chin, A; Wang, SJ; Yen, FY; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS |
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