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國立交通大學 |
2014-12-08T15:38:57Z |
Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors
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Ke, WC; Huang, HY; Ku, CS; Yen, KH; Lee, L; Chen, WK; Chou, WC; Lee, MC; Chen, WH; Lin, WJ; Cheng, YC; Cherng, YT |
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