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"yen st"的相關文件
顯示項目 1-25 / 26 (共2頁) 1 2 > >> 每頁顯示[10|25|50]項目
國立交通大學 |
2019-04-03T06:44:51Z |
Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current
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Zakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA |
國立交通大學 |
2019-04-03T06:42:52Z |
Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic field
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Zakharova, A; Nilsson, K; Chao, KA; Yen, ST |
國立交通大學 |
2019-04-03T06:39:52Z |
Theory of resonant states of hydrogenic impurities in quantum wells
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Yen, ST |
國立交通大學 |
2019-04-03T06:39:51Z |
Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
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Zakharova, A; Yen, ST; Chao, KA |
國立交通大學 |
2019-04-03T06:38:23Z |
Resonant hydrogenic impurity states and 1s-2p(0) transitions in coupled double quantum wells
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Yen, ST |
國立交通大學 |
2019-04-02T06:00:55Z |
Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
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Lin, G; Yen, ST; Lee, CP; Liu, DC |
國立交通大學 |
2019-04-02T06:00:30Z |
Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states
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Yen, ST; Lee, CP |
國立交通大學 |
2019-04-02T05:59:15Z |
ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS
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YEN, ST; TSAI, CM; LEE, CP; LIU, DC |
國立交通大學 |
2019-04-02T05:58:33Z |
A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current
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Yen, ST; Lee, CP |
國立交通大學 |
2014-12-08T15:48:46Z |
Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers
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Yen, ST; Lee, CP |
國立交通大學 |
2014-12-08T15:38:49Z |
A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields
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Lapushkin, I; Zakharova, A; Yen, ST; Chao, KA |
國立交通大學 |
2014-12-08T15:37:19Z |
Evidence for capture of holes into resonant states in boron-doped silicon
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Yen, ST; Tulupenko, VN; Cheng, ES; Chung, PK; Lee, CP; Dalakyan, AT; Chao, KA |
國立交通大學 |
2014-12-08T15:27:36Z |
980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence
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Yen, ST; Lin, G; Liu, DC; Tsai, CM; Lee, CP |
國立交通大學 |
2014-12-08T15:25:15Z |
Direct experimental evidence of the hole capture by resonant levels in boron doped silicon
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Yen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V |
國立交通大學 |
2014-12-08T15:19:31Z |
Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures
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Zakharova, A; Yen, ST; Nilsson, K; Chao, KA |
國立交通大學 |
2014-12-08T15:04:06Z |
ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS
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YEN, ST; TSAI, CM; LEE, CP; LIU, DC |
國立交通大學 |
2014-12-08T15:03:42Z |
INFLUENCE OF X-VALLEY SUPERLATTICE ON ELECTRON BLOCKING BY MULTIQUANTUM BARRIERS
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YEN, ST; LEE, CP; TSAI, CM; CHEN, HR |
國立交通大學 |
2014-12-08T15:02:59Z |
Theoretical investigation on semiconductor lasers with passive waveguides
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Yen, ST; Lee, CP |
國立交通大學 |
2014-12-08T15:02:24Z |
A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current
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Yen, ST; Lee, CP |
國立交通大學 |
2014-12-08T15:02:19Z |
Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current
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Yen, ST; Lee, CP |
國立交通大學 |
2014-12-08T15:02:11Z |
Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure
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Lin, G; Yen, ST; Lee, CP; Liu, DC |
國立交通大學 |
2014-12-08T15:01:57Z |
Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states
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Yen, ST; Lee, CP |
國立交通大學 |
2004-03-01 |
Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
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Zakharova, A; Yen, ST; Chao, KA |
國立交通大學 |
2001-12-15 |
Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
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Zakharova, A; Yen, ST; Chao, KA |
國立臺灣大學 |
2000-08 |
Band-offset determination and excitons in SiGe/Si(001) quantum wells
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Cheng, HH; Yen, ST; Nicholas, RJ |
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