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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2019-04-03T06:44:51Z Spin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc current Zakharova, A; Lapushkin, I; Nilsson, K; Yen, ST; Chao, KA
國立交通大學 2019-04-03T06:42:52Z Six-band k center dot p calculation of spin-dependent interband tunneling in strained broken-gap heterostructures under a quantizing magnetic field Zakharova, A; Nilsson, K; Chao, KA; Yen, ST
國立交通大學 2019-04-03T06:39:52Z Theory of resonant states of hydrogenic impurities in quantum wells Yen, ST
國立交通大學 2019-04-03T06:39:51Z Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells Zakharova, A; Yen, ST; Chao, KA
國立交通大學 2019-04-03T06:38:23Z Resonant hydrogenic impurity states and 1s-2p(0) transitions in coupled double quantum wells Yen, ST
國立交通大學 2019-04-02T06:00:55Z Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure Lin, G; Yen, ST; Lee, CP; Liu, DC
國立交通大學 2019-04-02T06:00:30Z Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states Yen, ST; Lee, CP
國立交通大學 2019-04-02T05:59:15Z ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS YEN, ST; TSAI, CM; LEE, CP; LIU, DC
國立交通大學 2019-04-02T05:58:33Z A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current Yen, ST; Lee, CP
國立交通大學 2014-12-08T15:48:46Z Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers Yen, ST; Lee, CP
國立交通大學 2014-12-08T15:38:49Z A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields Lapushkin, I; Zakharova, A; Yen, ST; Chao, KA
國立交通大學 2014-12-08T15:37:19Z Evidence for capture of holes into resonant states in boron-doped silicon Yen, ST; Tulupenko, VN; Cheng, ES; Chung, PK; Lee, CP; Dalakyan, AT; Chao, KA
國立交通大學 2014-12-08T15:27:36Z 980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence Yen, ST; Lin, G; Liu, DC; Tsai, CM; Lee, CP
國立交通大學 2014-12-08T15:25:15Z Direct experimental evidence of the hole capture by resonant levels in boron doped silicon Yen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V
國立交通大學 2014-12-08T15:19:31Z Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures Zakharova, A; Yen, ST; Nilsson, K; Chao, KA
國立交通大學 2014-12-08T15:04:06Z ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS YEN, ST; TSAI, CM; LEE, CP; LIU, DC
國立交通大學 2014-12-08T15:03:42Z INFLUENCE OF X-VALLEY SUPERLATTICE ON ELECTRON BLOCKING BY MULTIQUANTUM BARRIERS YEN, ST; LEE, CP; TSAI, CM; CHEN, HR
國立交通大學 2014-12-08T15:02:59Z Theoretical investigation on semiconductor lasers with passive waveguides Yen, ST; Lee, CP
國立交通大學 2014-12-08T15:02:24Z A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current Yen, ST; Lee, CP
國立交通大學 2014-12-08T15:02:19Z Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current Yen, ST; Lee, CP
國立交通大學 2014-12-08T15:02:11Z Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure Lin, G; Yen, ST; Lee, CP; Liu, DC
國立交通大學 2014-12-08T15:01:57Z Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states Yen, ST; Lee, CP
國立交通大學 2004-03-01 Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells Zakharova, A; Yen, ST; Chao, KA
國立交通大學 2001-12-15 Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells Zakharova, A; Yen, ST; Chao, KA
國立臺灣大學 2000-08 Band-offset determination and excitons in SiGe/Si(001) quantum wells Cheng, HH; Yen, ST; Nicholas, RJ

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