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國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
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