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| 國立交通大學 |
2017-04-21T06:49:53Z |
III-V MOSFETs with a New Self-Aligned Contact
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Zhang, Xingui; Guo, Huaxin; Ko, Chih-Hsin; Wann, Clement H.; Cheng, Chao-Ching; Lin, Hau-Yu; Chin, Hock-Chun; Gong, Xiao; Lim, Phyllis Shi Ya; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Yeo, Yee-Chia |
| 國立交通大學 |
2014-12-08T15:13:09Z |
Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
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Wang, Xin Peng; Lim, Andy Eu-Jin; Yu, Hong Yu; Li, Ming-Fu; Ren, Chi; Loh, WeiYip; Zhu, Chun Xiang; Chin, Albert; Trigg, Alastair David; Yeo, Yee-Chia; Biesemans, Serge; Lo, Guo-Qiang; Kwong, Dim-Lee |
| 國立交通大學 |
2014-12-08T15:11:35Z |
Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
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Zhang, Xingui; Guo, Huaxin; Lin, Hau-Yu; Cheng, Chao-Ching; Ko, Chih-Hsin; Wann, Clement H.; Luo, Guang-Li; Chang, Chun-Yen; Chien, Chao-Hsin; Han, Zong-You; Huang, Shih-Chiang; Chin, Hock-Chun; Gong, Xiao; Koh, Shao-Ming; Lim, Phyllis Shi Ya; Yeo, Yee-Chia |
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