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机构 日期 题名 作者
國立交通大學 2019-04-02T05:59:27Z MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES CHENG, KL; CHENG, HC; LIU, CC; LEE, C; YEW, TR
國立交通大學 2014-12-08T15:45:07Z Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications Hu, JC; Chang, TC; Wu, CW; Chen, LJ; Hsiung, CS; Hsieh, WY; Lur, W; Yew, TR
國立交通大學 2014-12-08T15:43:18Z A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature Lee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR
國立交通大學 2014-12-08T15:42:47Z Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees C Lee, WH; Lin, JC; Lee, C; Cheng, HC; Yew, TR
國立交通大學 2014-12-08T15:27:43Z MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C CHENG, KL; LIU, CC; CHENG, HC; LEE, CY; YEW, TR
國立交通大學 2014-12-08T15:27:35Z Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C Cheng, KL; Liu, CC; Fu, CM; Cheng, HC; Lee, C; Yew, TR
國立交通大學 2014-12-08T15:27:30Z Diagnostic techniques for polycrystalline thin film growth Cheng, KL; Cheng, HC; Yew, TR
國立交通大學 2014-12-08T15:27:23Z Low temperature deposited highly-conductive N-type SiC thin films Cheng, KL; Cheng, HC; Lee, WH; Lee, C; Yew, TR
國立交通大學 2014-12-08T15:26:32Z A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxide Chung, SS; Chen, SJ; Yang, CK; Cheng, SM; Lin, SH; Sheng, YC; Lin, HS; Hung, KT; Wu, DY; Yew, TR; Chien, SC; Liou, FT; Wen, F
國立交通大學 2014-12-08T15:03:34Z EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C LIU, CC; LEE, CY; CHENG, KL; CHENG, HC; YEW, TR

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