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机构	日期	题名	作者
國立中山大學	2007-11	Influence of Block Oxide Width on a Silicon on Partial Insulator Field-Effect Transistor	Jyi-Tsong Lin; Yi-Chuen Eng
國立中山大學	2007-11	A Novel Middle-Gate-Double-Channel FET for high Reliability Use	Hau-Yuan Huang;Jyi-Tsong Lin;Yi-Chuen Eng;Jeng-Da Lin;Kung-Kai Kao
國立中山大學	2007-11	Characteristics Study of Pillar Field-Effect Transistor for Future High Reliability application	Jyi-Tsong Lin;Kung-Kai Kao;Jeng-Da Lin;Yi-Chuen Eng;Shiang-Shi Kang;Hau-Yuan Huang
國立中山大學	2007-09	Improvement of Self-heating Effects in Nanoscale Multi-substrate Contact Field-effect Transistors	Yi-Chuen Eng;Jyi-Tsong Lin
國立中山大學	2007-09	Self-aligned Block Oxide Process for bSPIFETs	Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學	2007-07	Advanced π-FET Technology for 45 nm Technology Node	Yi-Chuen Eng;Jyi-Tsong Lin
國立中山大學	2007-06	Oxide Islands Design for Elimination of Ultra-shallow Junction Formation	Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學	2007-05	Source/Drain-Tied Poly-Si Thin-Film Transistor with Π-Shaped Active Region for Device Reliability Improvement	Jyi-Tsong Lin; Yi-Chuen Eng
國立中山大學	2007-05	Self-aligned Block Oxide Process for bFDSOI Devices	Yi-Chuen Eng;Jyi-Tsong Lin
國立中山大學	2007-05	Misalignment of the Block Oxide Height in Self-Aligned bSPIFET	Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學	2007-05	A New Self-Aligned Double-Gate Thin-Film Transistor With π-Shaped Source/Drain Regions	Jyi-Tsong Lin; J. Chen;Yi-Chuen Eng;Wei-Jhe Yang
國立中山大學	2007-05	Self-aligned Block Oxide Enclosed Body Process for FDSOI Devices	Yi-Chuen Eng;Jyi-Tsong Lin
國立中山大學	2007-05	The Impact of Block Oxide Height in Self-Aligned bSPIFET	Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學	2007-01	Analysis of Si-body Thickness Variation for a new 40 nm Gate Length bFDSOI	Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-12	Analysis of the Block Oxide Width Variations in a Body-tied Nanodevice	Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學	2006-11	An Investigation Of The Self-Aligned And Smart-Body-Tied Bottom-Gate Thin Film Transistor	Jyi-Tsong Lin;Wei-Jhe Yang;Jhen-Chen;Yi-Chuen Eng
國立中山大學	2006-10	An Investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide	Yi-Chuen Eng;Jyi-Tsong Lin;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-10	Characterization of the Self-aligned Pseudo-SOI Device Structures	Jyi-Tsong Lin;Yi-Chuen Eng
國立中山大學	2006-10	A Nanoscale bSPIFET to Overcome CMOS Scaling	Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-07	Ultra-Short-Channel Characteristics of Planar MOSFETs with Block Oxide	Jyi-Tsong Lin;Yi-Chuen Eng;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-07	HIGH PERFORMANCE THIN-FILM TRANSISTOR WITH L-SHAPED BLOCK OXIDE	Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin;Kuo-Dong Huang
國立中山大學	2006-05	Investigation of a Pseudo Vertical SOI MOSFET With L-Shaped Block Layer	Jyi-Tsong Lin;Kao-Cheng Lin;Tai-Yi Lee;Yi-Chuen Eng
國立中山大學	2006-05	A Novel Vertical MOSFET with Smart Source/ Body Contact	Tai-Yi Lee;Jyi-Tsong Lin;Yi-Chuen Eng;Kao-Cheng Lin
國立中山大學	2006-05	A Novel Device Architecture: Silicon on Partial Insulator with Block Oxide	Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-05	Elimination of Floating-body Effect and Thermal Instability in a Nano Quasi-SOI MOSFET with π-shaped Semiconductor Layer	Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-05	A NOVEL FDSOI MOSFET WITH BLOCK OXIDE ENCLOSED BODY	Jyi-Tsong Lin;Yi-Chuen Eng;Kuo-Dong Huang;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-05	Investigation of the Novel Attributes of a Vertical MOSFET Device with Internal Block Layer: a 2D Simulation Study	Jyi-Tsong Lin;Kao-Cheng Lin;Tai-Yi Lee;Yi-Chuen Eng
國立中山大學	2006-05	A Nano Quasi-SOI MOSFET with π-shaped Semiconductor Layer	Yi-Chuen Eng;Jyi-Tsong Lin;Tai-Yi Lee;Kao-Cheng Lin
國立中山大學	2006-05	An Impact of Block Oxide on 50 nm Gate Length Planar MOSFETs	Jyi-Tsong Lin;Yi-Chuen Eng;Tai-Yi Lee;Kao-Cheng Lin;Kuo-Dong Huang
國立中山大學	2005-05	Using double-spacer technique to Fabricate Silicon on Partial Insulator with block oxide	Jyi-Tsong Lin;Yi-Chuen Eng;Chun-Ming Pan

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