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Showing items 11-13 of 13 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:27:09Z |
An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's
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Chung, SS; Chen, SJ; Yih, CM; Yang, WJ; Chao, TS |
| 國立交通大學 |
2014-12-08T15:26:55Z |
N-channel versus P-channel flash EEPROM - Which one has better reliabilities
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Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:01:20Z |
A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions
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Cheng, SM; Yih, CM; Yeh, JC; Kuo, SN; Chung, SS |
Showing items 11-13 of 13 (2 Page(s) Totally)
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