| 臺大學術典藏 |
2018-09-10T06:03:39Z |
Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures
|
Jin-Wei Shi; Yen, J.-L.; Jiang, C.-H.; Chen, K.-M.; Hung, T.-J.; Ying-Jay Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T06:03:38Z |
Coulomb blockade behavior in individual multiwalled carbon nanotubes
|
Y. F. Hsiou; Y. J. Yang; L. Stobinski; Watson Kuo; C. D. Chen; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T05:52:24Z |
Self-regulating and diameter-selective growth of GaN nanowires
|
Kuo, C.-K.; Hsu, C.-W.; Wu, C.-T.; Lan, Z.-H.; Mou, C.-Y.; Chen, C.-C.; Yang, Y.-J.; Chen, L.-C.; Chen, K.-H.; YING-JAY YANG; CHUNG-YUAN MOU |
| 臺大學術典藏 |
2018-09-10T05:29:49Z |
Vertical-Cavity Surface-Emitting Lasers (VCSELs) with High-Power and Single-Spot Far-Field Distributions at 850nm Wavelength by use of Petal-Shaped Light-Emitting Apertures
|
T.-J. Hung; Jin-Wei Shi; J.-L. Yen; C.-H. Jiang; K.-M. Chen; Ying-Jay Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T05:29:49Z |
A fundamental modeling approach for nano-grinding of silicon wafers
|
H. T. Young; Hung-Yi Huang; Ying-Jay Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T05:29:48Z |
Single-mode vertical-cavity surface-emitting laser with ring-shaped light-emitting aperture
|
YING-JAY YANG; J.-L. Yen; Y.-J. Yang; K.-M. Chen; C.-H. Jiang; Jin-Wei Shi |
| 臺大學術典藏 |
2018-09-10T05:00:10Z |
Controlled placement and electrical contact properties of individual multiwalled carbon nanotubes on patterned silicon chips
|
Y. F. Hsiou; Y. J. Yang; L. Stobinski; Watson Kuo; C. D. Chen; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T05:00:10Z |
Single-Mode Vertical-Cavity-Surface-Emitting-Laser (VCSEL) with Ring Shaped Light-Emitting Aperture
|
C.-H. Jiang; Jin-Wei Shi; J.-L. Yen; K.-M. Chen; Ying-Jay Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:36:15Z |
Two-dimensional vertical-cavity surface-emitting laser array fabricated by zinc diffusion
|
J. L. Yen; Y. J. Yang; C. Y. Lin; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:36:14Z |
Improvements in direct-current characteristics of Al0.45Ga0.55As/GaAs digital graded superlattice-emitter heterojunction bipolar transistors with reduced turn-on voltage by wet-oxidation
|
M.-K. Tsai; Y.-W. Wu; S.-W. Tan; W.-S. Lour; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:36:14Z |
Controlled Placement and Electrical Contact Properties of Individual Multi-walled Carbon Nanotubes on Silicon Substrates
|
Y.F. Hsiou; C. D. Chen; Y. J. Yang; L. Stobinski; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:36:14Z |
Fabrication and Electrical transport properties of a multiwalled carbon nanotube on Silicon Chip
|
Y.F. Hsiou; Y.L. Zhong; Watson Kuo; C.D. Chen; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:36:14Z |
Observation of current gain collapse in large-area HBT with rectangular emitter and etched base
|
M. -K. Tsai; S.-W. Tan; W. S. Lour; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:15:53Z |
Temperature dependence of InN film growth
|
J. S. Hwang; F. H. Yang; T. H. Li; C. M. Chuan; C. T. Wu; Y. J. Yang; L. G. Hwa; L. C. Chen; K. H. Chen; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:15:53Z |
Photoluminescence and raman study of InN films ion-implanted with nitrogen and magnesium
|
C. M. Chuan; J. S. Hwang; F. H. Yang; Y. J. Yang; K. H. Chen; L. C. Chen; L. G. Hwa; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:15:52Z |
High growth rate deposition of oriented hexagonal InN films
|
F. H. Yang; J. H. Hwang; K. H. Chen; Y. J. Yang; T. H. Lee; L. G. Hwa; L. C. Chen; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:15:52Z |
Fabrication of blue GaN light-emitting diodes by laser etching
|
Y. J. Yang; J. H. Lin; L. Wang; YING-JAY YANG; F. H. Yang; C. J. Hsao |
| 臺大學術典藏 |
2018-09-10T04:15:52Z |
Lateral growth of InN on GaN/sapphire
|
YING-JAY YANG; Y. J. Yang; F. H. Yang; J. H. Hwang; K. H. Chen |
| 臺大學術典藏 |
2018-09-10T04:15:52Z |
Depletion-mode and enhancement-mode InGaP/GaAs δ-HEMTs for low supply-voltage applications
|
M.-K. Tsai; S.-W. Tan; Y.-W. Wu; W.-S. Lour; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T04:15:52Z |
Investigation of self-aligned p++-GaAs/n-InGaP hetero-junction field-effect transistors
|
W.-S. Lour; M.-K. Tsai; K.-C. Chen; S.-W. Tan; Y.-W. Wu; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T03:51:08Z |
Ultrahigh bandwidth MSM traveling-wave photodetectors
|
J.-W. Shi; K.-G. Gan; Y.-J. Chiu; C.-K. Sun; Y. J. Yang; J. E. Bowers; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T03:51:08Z |
Stable single-mode 850 nm VCSELs with a higher-order mode absorber formed by shallow Zn diffusion
|
C. C. Chen; S. J. Liaw; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T03:51:08Z |
The effect of Mg diffusion on the contact resistance of low doped p-GaN
|
C. C. Chen; J. L. Yen; Y. J. Yang; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T03:51:08Z |
Raman and photoluminescence study of indium nitride films
|
J. S. Hwang; Y. F. Chen; F. H. Yang; Y. J. Yang; C. T. Wu; K. H. Chen; T. H. Li; L. G. Hwa; L. C. Chen; YING-JAY YANG |
| 臺大學術典藏 |
2018-09-10T03:51:07Z |
Effects of high-speed reaction gas on InN growth
|
F. H. Yang; J. H. Hwang; K. H. Chen; Y. J. Yang; YING-JAY YANG |
