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Institution	Date	Title	Author
國立成功大學	2018	Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant	Hsu, W.-Y.;Lian, Y.-C.;Wu, P.-Y.;Yong, W.-M.;Sheu, J.-K.;Lin, K.-L.;Wu, Y.S.

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