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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立成功大學 2018 Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant Hsu, W.-Y.;Lian, Y.-C.;Wu, P.-Y.;Yong, W.-M.;Sheu, J.-K.;Lin, K.-L.;Wu, Y.S.

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