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Showing items 1-10 of 10 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:16Z |
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
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Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
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Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:34:46Z |
Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices
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Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:25:43Z |
3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
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Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention
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Lai, CH; Chin, A; Chiang, KC; Yoo, WJ; Cheng, CF; McAlister, SP; Chi, CC; Wu, P |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
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Chin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
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Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel program-erasable high-(K) A1N-Si MIS capacitor
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Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:18:49Z |
Low noise RF MOSFETs on flexible plastic substrates
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Kao, HL; Chin, A; Hung, BF; Lee, CF; Lai, JM; McAlister, SP; Sarnudra, GS; Yoo, WJ; Chi, CC |
| 國立交通大學 |
2014-12-08T15:18:47Z |
Formation of dual-phase HfO2-HfxSi1-xO2 dielectric and its application in memory devices
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Wang, YQ; Chen, JH; Yoo, WJ; Yeo, YC; Chin, A; Du, AY |
Showing items 1-10 of 10 (1 Page(s) Totally)
1
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