|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"you bo"
Showing items 1-8 of 8 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2017-04-21T06:56:31Z |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立成功大學 |
2016-04 |
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Hung, Yu-Ju; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen |
| 國立交通大學 |
2015-12-02T02:59:33Z |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立成功大學 |
2015 |
A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Tsai, Jyun-Yu; Lo, Wen-Hung; Ho, Szu-Han; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tseng, Tseung-Yuen; Wu, James; Tsai, Wei-Kung; Chenge, Kuo-Yu; Syu, Yong-En |
| 國立交通大學 |
2014-12-08T15:36:22Z |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
|
Chen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:32:38Z |
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Lo, Wen-Hung; Ho, Szu-Han; Dai, Chih-Hao; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立成功大學 |
2014-06 |
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
|
Chen, Ching-En; Chang, Ting-Chang; Chen, Hua-Mao; You, Bo; Yang, Kai-Hsiang; Ho, Szu-Han; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Hung, Yu-Ju; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
| 國立成功大學 |
2013 |
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
|
Chen, Ching-En; Chang, Ting-Chang; You, Bo; Lo, Wen-Hung; Ho, Szu-Han; Dai, Chih-Hao; Tsai, Jyun-Yu; Chen, Hua-Mao; Liu, Guan-Ru; Tai, Ya-Hsiang; Tseng, Tseung-Yuen |
Showing items 1-8 of 8 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
