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Institution Date Title Author
國立交通大學 2014-12-08T15:37:17Z Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T
國立交通大學 2014-12-08T15:25:22Z Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T
國立交通大學 2014-12-08T15:18:29Z Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH

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