臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	Repositories
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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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	機構典藏計畫網站
	ROAR
	OpenDOAR
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	Ira
	DSPACE
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	臺大學術典藏NTU Scholars

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Showing items 1-19 of 19 (1 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2022-03-22T15:05:12Z	Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3as a gate dielectric	Young, L. B.; Liu, J.; Lin, Y. H.G.; Wan, H. W.; Chiang, L. S.; Kwo, J.; Hong, M.
國立成功大學	2022	Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K	Zou, W.-J.;Guo, M.-X.;Wong, J.-F.;Huang, Z.-P.;Chia, J.-M.;Chen, W.-N.;Wang, S.-X.;Lin, K.-Y.;Young, L.B.;Lin, Y.G.;Yahyavi, M.;Wu, C.-T.;Jeng, H.-T.;Lee, S.-F.;Chang, T.-R.;Hong, M.;Kwo, J.
臺大學術典藏	2021-07-26T09:44:18Z	Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)	Lin K.Y;Young L.B;Cheng C.K;Chen K.H;Lin Y.H;Wan H.W;Cai R.F;Lo S.C;Li M.Y;Kwo J;Hong M.; Lin K.Y; CHIA-KUEN CHENG et al.
臺大學術典藏	2021-07-26T09:44:18Z	Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A	Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al.
臺大學術典藏	2021-07-21T23:21:09Z	In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures	Lin, Y. H.G.; Wan, H. W.; Young, L. B.; Liu, J.; Cheng, Y. T.; Lin, K. Y.; Hong, Y. J.; Wu, C. T.; Kwo, J.; Hong, M.
臺大學術典藏	2021-06-22T02:00:32Z	Epitaxy from a periodic y–o monolayer: Growth of single-crystal hexagonal YALO3 perovskite	Hong, M.;Cheng, C.-K.;Lin, Y.-H.;Young, L.B.;Cai, R.-F.;Hsu, C.-H.;Wu, C.-T.;Kwo, J.; Hong, M.; Cheng, C.-K.; Lin, Y.-H.; Young, L.B.; Cai, R.-F.; Hsu, C.-H.; Wu, C.-T.; Kwo, J.; CHIA-KUEN CHENG
臺大學術典藏	2021-06-22T02:00:31Z	Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition	Young, L.B.;Cheng, C.-K.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Cai, R.-F.;Lo, S.-C.;Li, M.-Y.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Cai, R.-F.; Lo, S.-C.; Li, M.-Y.; Hsu, C.-H.; Kwo, J.; Hong, M.; CHIA-KUEN CHENG
臺大學術典藏	2019-12-27T07:49:17Z	Demonstration of large field effect in topological insulator films via a high-庥 back gate	Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:17Z	Demonstration of large field effect in topological insulator films via a high-庥 back gate	Wang, C.Y.;Lin, H.Y.;Yang, S.R.;Chen, K.H.M.;Lin, Y.H.;Chen, K.H.;Young, L.B.;Cheng, C.K.;Fanchiang, Y.T.;Tseng, S.C.;Hong, M.;Kwo, J.; Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:16Z	Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition	Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:16Z	Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition	Cheng, C.K.;Young, L.B.;Lin, K.Y.;Lin, Y.H.;Wan, H.W.;Lu, G.J.;Chang, M.T.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Hsu, C.H.;Kwo, J.;Hong, M.; Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:16Z	Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A	Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:16Z	Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A	Young, L.B.;Cheng, C.-K.;Lu, G.-J.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Li, M.-Y.;Cai, R.-F.;Lo, S.-C.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:15Z	Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - A comparative study	Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:15Z	Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)	Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:15Z	Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y 2 O 3 /Al 2 O 3 on GaAs(001)	Lin, K.Y.;Young, L.B.;Cheng, C.K.;Chen, K.H.;Lin, Y.H.;Wan, H.W.;Cai, R.F.;Lo, S.C.;Li, M.Y.;Kwo, J.;Hong, M.; Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:14Z	Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition	Lin, Y.H.; Lin, K.Y.; Hsueh, W.J.; Young, L.B.; Chang, T.W.; Chyi, J.I.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:11Z	Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum	MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.
臺大學術典藏	2019-12-27T07:49:11Z	Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum	MINGHWEI HONG; Hong, M.; Cheng, C.P.; Pi, T.W.; Kwo, J.; Lin, K.Y.;Wan, H.W.;Chen, K.H.M.;Fanchiang, Y.T.;Chen, W.S.;Lin, Y.H.;Cheng, Y.T.;Chen, C.C.;Lin, H.Y.;Young, L.B.;Cheng, C.P.;Pi, T.W.;Kwo, J.;Hong, M.; Lin, K.Y.; Wan, H.W.; Chen, K.H.M.; Fanchiang, Y.T.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Chen, C.C.; Lin, H.Y.; Young, L.B.

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