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"yu cc"的相關文件
顯示項目 56-65 / 145 (共15頁)
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| 國立交通大學 |
2014-12-08T15:43:53Z |
Beryllium-implanted P-type GaN with high carrier concentration
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Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:50Z |
High etching rate of GaN films by KrF excimer laser
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Chu, CF; Lee, CK; Yu, CC; Wang, YK; Tasi, JY; Yang, CR; Wang, SC |
| 國立交通大學 |
2014-12-08T15:43:50Z |
Investigation of beryllium implanted P-type GaN
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Yu, CC; Chu, CF; Tsai, JY; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:04Z |
Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
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Yu, CC; Chu, CF; Tsai, JY; Huang, HW; Hsueh, TH; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:42:03Z |
Electrical and optical properties of beryllium-implanted Mg-doped GaN
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Yu, CC; Chu, CF; Tsai, JY; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:41:18Z |
Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off
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Chu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Effect of rapid thermal annealing on beryllium implanted p-type GaN
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Huang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
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Kao, CC; Huang, HW; Tsai, JY; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:39:20Z |
Study of GaN light-emitting diodes fabricated by laser lift-off technique
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Chu, CF; Lai, FI; Chu, JT; Yu, CC; Lin, CF; Kuo, HC; Wang, SC |
| 國立交通大學 |
2014-12-08T15:37:27Z |
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
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Huang, HW; Kao, CC; Chu, JT; Kuo, HC; Wang, SC; Yu, CC; Lin, CF |
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