|
English
|
正體中文
|
简体中文
|
总笔数 :2856704
|
|
造访人次 :
53662721
在线人数 :
1863
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"yu chang hung"的相关文件
显示项目 6-15 / 33 (共4页) 1 2 3 4 > >> 每页显示[10|25|50]项目
| 國立交通大學 |
2018-08-21T05:53:58Z |
Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs
|
Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2018-01-24T07:38:51Z |
超薄絕緣層異質三五族與鍺通道金氧半場效電晶體及單層與多層二維過渡金屬硫屬化合物之邏輯電路及靜態隨機存取記憶體之研究與分析
|
余昌鴻; 蘇彬; Yu, Chang-Hung; Su, Pin |
| 國立交通大學 |
2017-04-21T06:56:15Z |
Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs
|
Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:50:14Z |
Anomalous Electrostatics and Intrinsic Variability in GeOI p-MOSFET
|
Yu, Chang-Hung; Su, Pin |
| 國立交通大學 |
2017-04-21T06:49:44Z |
Built-in Effective Body-Bias Effect in UTBB Hetero-Channel MOSFETs and Its Suppression
|
Yu, Chang-Hung; Su, Pin |
| 國立交通大學 |
2017-04-21T06:49:30Z |
Investigation and Benchmark of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETs
|
Yu, Chang-Hung; Su, Pin |
| 國立交通大學 |
2017-04-21T06:49:25Z |
Stability Optimization of Monolithic 3-D MoS2-n/WSe2-p SRAM Cells for Superthreshold and Near-/Sub-threshold Applications
|
Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2017-04-21T06:49:25Z |
Performance Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits
|
Yu, Chang-Hung; Su, Pin; Chuang, Ching-Te |
| 國立臺灣海洋大學 |
2017 |
藉由分子堆疊調控放光波長
|
Yu, Chang-Hung; 余長鴻 |
| 國立交通大學 |
2016-03-28T00:04:24Z |
Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications
|
Yu, Chang-Hung; Fan, Ming-Long; Yu, Kuan-Chin; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
显示项目 6-15 / 33 (共4页) 1 2 3 4 > >> 每页显示[10|25|50]项目
|