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Showing items 11-25 of 25 (1 Page(s) Totally)
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| 國立成功大學 |
2008 |
The influence of vicinal-cut sapphire substrate on AlGaN/GaN heterostructure by MOCVD
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Chang, Ping-Chuan; Yu, Chia-Lin |
| 國立成功大學 |
2007-11 |
High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated mg-doped GaN layer
|
Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Lee, K. H.; Liu, C. H.; Wu, S. L. |
| 國立成功大學 |
2007-10-01 |
InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer
|
Chang, Ping-Chuan; Yu, Chia-Lin |
| 國立成功大學 |
2007-09 |
Low-noise and high-detectivity GaN-Based UV photodiode with a semi-insulating Mg-doped GaN cap layer
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Chang, Ping-Chuan; Yu, Chia-Lin; Chang, Shoou-Jinn; Lin, Y. C.; Liu, C. H.; Wu, S. L. |
| 國立成功大學 |
2007-05-07 |
氮化鎵系列低漏電流光檢測器及金半異質場效電晶體之製作與元件特性分析
|
余佳霖; Yu, Chia-Lin |
| 國立成功大學 |
2007-05-07 |
氮化鎵系列低漏電流光檢測器及金半異質場效電晶體之製作與元件特性分析
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余佳霖; Yu, Chia-Lin |
| 國立成功大學 |
2007-05 |
InGaN-GaN MQW metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap layers
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Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Shoou-Jinn; Chang, Ping-Chuan; Lee, K. H.; Lin, J. C. |
| 國立成功大學 |
2007 |
High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes
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Yu, Chia-Lin; Chang, Ping-Chuan; Chang, Shoou-Jinn; Wu, San-Lein |
| 國立成功大學 |
2007 |
GaN metal-semiconductor-metal ultraviolet photodetectors with Ir/Pt contact electrodes
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Yu, Chia-Lin; Chen, C. H.; Chang, Shoou-Jinn; Chang, Ping-Chuan |
| 國立成功大學 |
2006-10 |
Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers
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Chang, Shoou-Jinn; Yu, Chia-Lin; Chuang, Ricky Wenkuei; Chang, Ping-Chuan; Lin, Y. C.; Jhan, Y. W.; Chen, C. H. |
| 國立成功大學 |
2006-07 |
Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs
|
Chuang, Ricky Wenkuei; Chiu, Yueh Jye; Yu, Chia Lin |
| 國立成功大學 |
2006-05 |
Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes
|
Chang, Shoou-Jinn; Yu, Chia-Lin; Chen, C. H.; Chang, Ping-Chuan; Huang, K. C. |
| 國立成功大學 |
2006-03-01 |
High UV/visible rejection contrast AlGaN/GaN MIS photodetectors
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Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Su, Yan-Kuin; Yu, Chia-Lin; Huang, Bohr-Ran; Chen, Po-Chang |
| 國立成功大學 |
2005-04 |
In0.37Ga0.63N metal-semiconductor-metal photodetectors with recessed electrodes
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Yu, Chia-Lin; Chen, C. H.; Chang, Sou-Jian; Su, Yan-Kuin; Chen, S. C.; Chang, Ping-Chuan; Chen, Po-Chang; Wu, M. H.; Chen, H. C.; Su, K. C. |
| 國立成功大學 |
2005-03 |
Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts
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Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Chin-Hsiang; Chang, Shoou-Jinn; Yu, Chia-Lin; Lee, Ching-Ting; Lee, H. Y.; Gong, J.; Chen, Po-Chang; Wang, C. H. |
Showing items 11-25 of 25 (1 Page(s) Totally)
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