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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:39Z |
A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides
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Yang, KN; Huang, HT; Chang, MC; Chu, CM; Chen, YS; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:46Z |
Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:43:09Z |
Edge hole direct Tunneling leakage in ultrathin gate oxide p-channel MOSFETs
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Yang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SSM; Yu, DCH; Liang, MS |
Showing items 1-3 of 3 (1 Page(s) Totally)
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