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Showing items 11-20 of 24  (3 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:26:18Z Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學 2014-12-08T15:25:55Z High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology Chin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL
國立交通大學 2014-12-08T15:25:52Z High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafers Chin, A; Yu, DS; Wu, CH; Huang, CH; Chen, WJ
國立交通大學 2014-12-08T15:25:43Z 3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:25:15Z Physics and modeling of Ge-on-Insulator MOSFETs Chin, A; Kao, HL; Tseng, YY; Yu, DS; Chen, CC; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:25:11Z Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention Chin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC
國立交通大學 2014-12-08T15:25:11Z Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP
國立交通大學 2014-12-08T15:18:59Z The effect of IrO2-IrO2-Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-d GOI CMOSFETs Yu, DS; Liao, CC; Cheng, CF; Chin, A; Li, MF; McAlister, SP
國立交通大學 2014-12-08T15:17:29Z High work function IrxSi gates on HfAlON p-MOSFETs Wu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP
國立交通大學 2014-12-08T15:16:41Z Performance and potential of germanium on insulator field-effect transistors Yu, DS; Kao, HL; Chin, A; McAlister, SP

Showing items 11-20 of 24  (3 Page(s) Totally)
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