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机构 日期 题名 作者
臺北醫學大學 2015 Structure-based hybridization, synthesis and biological evaluation of novel tetracyclic heterocyclic azathioxanthone analogues as potential antitumor agents Chen, TC;Wu, CL;Lee, CC;Chen, CL;Yu, DS;HS*, Huang
臺北醫學大學 2015 Novel thiochromeno[2,3-c]quinolin-12-one derivatives, preparation method and application thereof Huang, HS;Yu, DS;Chen, TC
國立交通大學 2014-12-08T15:40:03Z Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL
國立交通大學 2014-12-08T15:39:53Z The copper contamination effect of Al2O3 gate dielectric on Si Liao, CC; Cheng, CF; Yu, DS; Chin, A
國立交通大學 2014-12-08T15:39:52Z High-density RF MIM capacitors using high-k La2O3 dielectrics Yang, MY; Yu, DS; Chin, A
國立交通大學 2014-12-08T15:39:52Z Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height Huang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP
國立交通大學 2014-12-08T15:39:32Z Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學 2014-12-08T15:37:03Z Reducing AC power consumption by three-dimensional integration of Ge-on-insulator CMOS on 1-poly-6-metal 0.18 mu m Si MOSFETs Yu, DS; Liao, CC; Chen, CC; Lee, CF; Cheng, CF; Chin, A; McAlister, SP
國立交通大學 2014-12-08T15:37:02Z Bias-temperature instability on fully silicided-germanided gates/high-k Al2O3CMOSFETs Liao, CC; Yu, DS; Cheng, CF; Chin, A
國立交通大學 2014-12-08T15:34:46Z Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devices Yu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP

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