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"yu xf"
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| 國立交通大學 |
2014-12-08T15:41:21Z |
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics
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Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB |
| 國立交通大學 |
2014-12-08T15:40:49Z |
PVD HfO2 for high-precision MIM capacitor applications
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Kim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:03Z |
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
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Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:00Z |
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
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Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
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Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
Showing items 1-5 of 5 (1 Page(s) Totally)
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