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| 臺大學術典藏 |
2018-09-10T15:33:12Z |
Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology
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Hou, F.-J.; Chuang, S.-S.; Hsueh, F.-K.; Kao, K.-H.; Sung, P.-J.; Yuan, W.-Y.; Yao, J.-Y.; Lu, Y.-C.; Lin, K.-L.; Wu, C.-T.; Chen, H.-C.; Chen, B.-Y.; Huang, G.-W.; Chen, H.J.H.; Li, J.-Y.; Li, Y.; Samukawa, S.; Chao, T.-S.; Tseng, T.-Y.; Wu, W.-F.; Hou, T.-H.; Yeh, W.-K.; Lee, Y.-J.; JIUN-YUN LI et al. |
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