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"yuh renn wu"的相关文件
显示项目 91-100 / 108 (共11页)
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| 臺大學術典藏 |
2018-09-10T08:08:58Z |
A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method
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Lu, I. Lin;Wu, Yuh-Renn;Singh, Jasprit; Lu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:36:26Z |
Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays
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Kun-Mao Pan;Yun-Wei Cheng;Liang-Yi Chen;Ying-Yuan Huang;Min-Yung Ke;Cheng-Pin Chen;Yuh-Renn Wu;JianJang Huang; Kun-Mao Pan; Yun-Wei Cheng; Liang-Yi Chen; Ying-Yuan Huang; Min-Yung Ke; Cheng-Pin Chen; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:07Z |
Gas-assisted focused-ion-beam lithography of a diamond (100) surface
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Datta, A; Wu, YR; Wang, YL; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:06Z |
Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes
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Huang, HH;Wu, YR; Huang, HH; Wu, YR; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:06Z |
Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
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Wu, YR;Chiu, CH;Chang, CY;Yu, PC;Kuo, HC; Wu, YR; Chiu, CH; Chang, CY; Yu, PC; Kuo, HC; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:06Z |
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
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Wu, YR;Lin, YY;Huang, HH;Singh, J; Wu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T06:56:01Z |
Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors
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Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T06:21:43Z |
Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures
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Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T06:21:42Z |
Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance
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Wu, YR; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T05:51:42Z |
Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length
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Wu, YR; Singh, M; Singh, J; YUH-RENN WU |
显示项目 91-100 / 108 (共11页)
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