| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
|
Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:36Z |
Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors
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Senanayake, Pradeep; Hung, Chung-Hong; Farrell, Alan; Ramirez, David A.; Shapiro, Joshua; Li, Chi-Kang; Wu, Yuh-Renn; Hayat, Majeed M.; Huffaker, Diana L.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:36Z |
Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs
|
Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T09:17:36Z |
Study of optical anisotropy in nonpolar and semipolar AlGaN quantum well deep ultraviolet light emission diode
|
Wang, Chang-Pei; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:47:03Z |
Scaling Performance Study of Ga2O3/GaN Nanowire Field Effect Transistor with 3D Finite Element Solver
|
Chi-Kang Li,; Jeng-Wei Yu,; Lung-Han Peng,; Yuh-Renn Wu,; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays
|
Liang-Yi Chen; Hung-Hsun Huang; Chun-Hsiang Chang; Ying-Yuan Huang; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing
|
Yun-Wei Cheng; Szu-Chieh Wang; Ying-Yuan Huang; Chun-Hsiang Chang; Sheng-Chieh Yang; Liang-Yi Chen; Min-Yung Ke; Chi-Kang Li; Yuh-Renn Wu; JianJang Huang; Yu-Hsuan Sun; JIAN-JANG HUANG; YUH-RENN WUet al. |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Study of thermoelectric properties of indium nitride nanowire
|
Huang, Hung-Hsun;Lu, I. Lin;Wu, Yuh-Renn; Huang, Hung-Hsun; Lu, I. Lin; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures
|
Chin, H-A;Cheng, I-C;Li, C-K;Wu, Y-R;Chen, J. Z.;Lu, W-S;Lee, W-L; Chin, H-A; Cheng, I-C; Li, C-K; Wu, Y-R; Chen, J. Z.; Lu, W-S; Lee, W-L; I-CHUN CHENG; JIAN-ZHANG CHEN; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:35:25Z |
Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor
|
Yu, J. W.;Li, C. K.;Chen, C. Y.;Wu, Y. R.;Chou, L. J.;Peng, L. H.; Yu, J. W.; Li, C. K.; Chen, C. Y.; Wu, Y. R.; Chou, L. J.; Peng, L. H.; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:15:11Z |
Strain-enhanced photoluminescence from Ge direct transition
|
Cheng, T.-H.;Peng, K.-L.;Ko, C.-Y.;Chen, C.-Y.;Lan, H.-S.;Wu, Y.-R.;Liu, C.W.;Tseng, H.-H.; Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; Wu, Y.-R.; Liu, C.W.; Tseng, H.-H.; CHEE-WEE LIU; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:14:35Z |
75GHz Ga2O3/{GaN} Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors
|
Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG; LUNG-HAN PENG |
| 臺大學術典藏 |
2018-09-10T08:14:35Z |
100GHz depletion-mode Ga$\\less$inf$\\greater$2$\\less$/inf$\\greater$O$\\less$inf$\\greater$3$\\less$/inf$\\greater$/{GaN} single nanowire {MOSFET} by photo-enhanced chemical oxidation method
|
Jeng-Wei Yu;Yuh-Renn Wu;Jian-Jang Huang;Lung-Han Peng; Jeng-Wei Yu; Yuh-Renn Wu; Jian-Jang Huang; Lung-Han Peng; JIAN-JANG HUANG |
| 臺大學術典藏 |
2018-09-10T08:08:58Z |
Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers
|
Dang, Po-Yuan;Wu, Yuh-Renn; Dang, Po-Yuan; Wu, Yuh-Renn; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:08:58Z |
Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N
|
Huang, Huei-Min;Huang, Hung-Hsun;Wu, Yuh-Renn;Lu, Tien-Chang; Huang, Huei-Min; Huang, Hung-Hsun; Wu, Yuh-Renn; Lu, Tien-Chang; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:08:58Z |
A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method
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Lu, I. Lin;Wu, Yuh-Renn;Singh, Jasprit; Lu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:36:26Z |
Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays
|
Kun-Mao Pan;Yun-Wei Cheng;Liang-Yi Chen;Ying-Yuan Huang;Min-Yung Ke;Cheng-Pin Chen;Yuh-Renn Wu;JianJang Huang; Kun-Mao Pan; Yun-Wei Cheng; Liang-Yi Chen; Ying-Yuan Huang; Min-Yung Ke; Cheng-Pin Chen; Yuh-Renn Wu; JianJang Huang; JIAN-JANG HUANG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:07Z |
Gas-assisted focused-ion-beam lithography of a diamond (100) surface
|
Datta, A; Wu, YR; Wang, YL; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:06Z |
Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes
|
Huang, HH;Wu, YR; Huang, HH; Wu, YR; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:06Z |
Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
|
Wu, YR;Chiu, CH;Chang, CY;Yu, PC;Kuo, HC; Wu, YR; Chiu, CH; Chang, CY; Yu, PC; Kuo, HC; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T07:28:06Z |
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
|
Wu, YR;Lin, YY;Huang, HH;Singh, J; Wu, YR; Lin, YY; Huang, HH; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T06:56:01Z |
Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors
|
Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T06:21:43Z |
Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures
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Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T06:21:42Z |
Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance
|
Wu, YR; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T05:51:42Z |
Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length
|
Wu, YR; Singh, M; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T05:16:49Z |
Velocity overshoot effects and scaling issues in III-V nitrides
|
Singh, M; Wu, YR; Singh, JP; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T05:16:49Z |
Sources of transconductance collapse in III-V nitrides - Consequences of velocity-field relations and source/gate design
|
Wu, YR; Singh, M; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T05:16:49Z |
Polar heterostructure for multifunction devices: Theoretical studies
|
Wu, YR and Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T04:48:13Z |
Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors
|
Wu, YR;Singh, J; Wu, YR; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T04:28:26Z |
Gate leakage suppression and contact engineering in nitride heterostructures
|
Wu, YR; Singh, M; Singh, J; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T03:44:21Z |
Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment
|
YUH-RENN WU; Wang, YL; Wu, YR; Datta, A |
| 臺大學術典藏 |
2017 |
A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons
|
YUH-RENN WU;Yuh-Renn Wu;Shuo-Fan Chen; Shuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU |
| 元智大學 |
2016-03-28 |
Electron injection and transport in phosphorescent organic light-emitting diode: the role of dopant molecule
|
Yi-Hsin Lan; Bo-Yen Lin; Lik-Ka Yun; Yuh-Renn Wu; Tien-Lung Chiu; Chi-Feng Lin; Jiun-Haw Lee |
