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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"yuh renn wuet al"的相關文件
顯示項目 1-4 / 4 (共1頁)
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| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
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Hardy, Matthew T.; Hsu, Po Shan; Dang, Po-Yuan; Wu, Feng; Romanov, Alexey; Wu, Yuh-Renn; Young, Erin C.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Koslow, Ingrid L.; YUH-RENN WUet al. |
| 臺大學術典藏 |
2018-09-10T09:17:37Z |
Influence of polarity on carrier transport in semipolar (20(21)over-bar) and (20(2)over-bar1) multiple-quantum-well light-emitting diodes
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Kawaguchi, Yoshinobu; YUH-RENN WUet al.; Huang, Chia-Yen; Wu, Yuh-Renn; Yan, Qimin; Pan, Chih-Chien; Zhao, Yuji; Tanaka, Shinichi; Fujito, Kenji; Feezell, Daniel; Van de Walle, Chris G.; DenBaars, Steven P.; Nakamura, Shuji |
| 臺大學術典藏 |
2018-09-10T08:42:13Z |
Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing
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Yun-Wei Cheng; Szu-Chieh Wang; Ying-Yuan Huang; Chun-Hsiang Chang; Sheng-Chieh Yang; Liang-Yi Chen; Min-Yung Ke; Chi-Kang Li; Yuh-Renn Wu; JianJang Huang; Yu-Hsuan Sun; JIAN-JANG HUANG; YUH-RENN WUet al. |
| 臺大學術典藏 |
2018-09-10T06:56:00Z |
Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling
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Chiu, CH; Wu, YR; Yen, HH; Chen, JR; Kao, CC; Yang, HW; Kuo, HC; Lu, TC; Yeh, WY; Wang, SC; Yu, PC; YUH-RENN WUet al. |
顯示項目 1-4 / 4 (共1頁)
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