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机构 日期 题名 作者
臺大學術典藏 2018-09-10T09:24:40Z Study on the lattice structure of InAsPSb grown on GaAs G. T. Chen,;C. J. Wu,;Z. C. Feng,;H. H. Lin,; G. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:24:40Z Short range structure of dilute nitride GaAsSbN H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T09:24:39Z Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs C. J. Wu;Z. C. Feng;W. M. Chang;C. C. Yang;H. H. Lin; C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T09:24:39Z Study on the structural properties of InP0.52Sb0.48 on GaAs C. J. Wu,;G. T. Chen,;Z. C. Feng,;W. M. Chang,;C. C. Yang,;H. H. Lin,; C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:01Z Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:01Z Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:01Z X-ray absorption find structures of InPSb alloys C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:46:00Z Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:52Z Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy Y. R. Lan,;C. J. Wu,;H. H. Lin,;L. Y. Chang,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:51Z X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy C. J. Wu,;Y. R. Lan,;L. Y. Chang,;Z. C. Feng,;H. H. Lin,; C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:50Z Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN
國立臺灣海洋大學 2013 Luminescence studies in InxGa1-xN epitaxial layers with different indium contents T.Y. Wu; C.C. Chang; K.K. Tiong; Y.C. Lee; S.Y. Hu; L.Y. Lin; T.Y. Lin; Z.C. Feng
國立臺灣大學 2008 Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire S. Sun, G. S. Tompa, C. Rice, X. W. Sun, Z. S. Lee, S. C. Lien, C. W. Huang, L. C. Cheng; Z. C. Feng
中原大學 1999 Infrared and Raman spectroscopic study of ZnMnSe materials grown by molecular beam epitaxy T. R. Yang;C. C. Lu;W. C. Chou;Z. C. Feng;S. J. Chua

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