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Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2017-04-21T06:55:58Z |
Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions
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Li, GongTan; Zhan, Runze; Yang, Bo-Ru; Liu, Chuan; Dong, ChengYuan; Lee, Chia-Yu; Wu, Yuan-Chun; Lu, Po-Yen; Deng, ShaoZhi; Shieh, Han-Ping D.; Xu, NingSheng |
國立交通大學 |
2014-12-08T15:34:06Z |
Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
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Zhan, Runze; Dong, Chengyuan; Liu, Po-Tsun; Shieh, Han-Ping D. |
國立交通大學 |
2014-12-08T15:31:53Z |
Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers
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Zhan, Runze; Dong, Chengyuan; Yang, Bo-Ru; Shieh, Han-Ping D. |
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
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