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"zhan runze"

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Institution Date Title Author
國立交通大學 2017-04-21T06:55:58Z Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions Li, GongTan; Zhan, Runze; Yang, Bo-Ru; Liu, Chuan; Dong, ChengYuan; Lee, Chia-Yu; Wu, Yuan-Chun; Lu, Po-Yen; Deng, ShaoZhi; Shieh, Han-Ping D.; Xu, NingSheng
國立交通大學 2014-12-08T15:34:06Z Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors Zhan, Runze; Dong, Chengyuan; Liu, Po-Tsun; Shieh, Han-Ping D.
國立交通大學 2014-12-08T15:31:53Z Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers Zhan, Runze; Dong, Chengyuan; Yang, Bo-Ru; Shieh, Han-Ping D.

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