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| 國立交通大學 |
2019-08-02T02:18:36Z |
Impact of the Stacking Order of HfOX and AlOX Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
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Chuang, Kai-Chi; Chu, Chi-Yan; Zhang, He-Xin; Luo, Jun-Dao; Li, Wei-Shuo; Cheng, Huang-Chung |
| 國立交通大學 |
2019-08-02T02:15:24Z |
Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition
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Luo, Jun-Dao; Zhang, He-Xin; Wang, Zheng-Ying; Gu, Siang-Sheng; Yeh, Yun-Tien; Chung, Hao-Tung; Chuang, Kai-Chi; Liao, Chan-Yu; Li, Wei-Shuo; Li, Yi-Shao; Li, Kai-Shin; Lee, Min-Hung; Cheng, Huang-Chung |
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