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"zhang qun"
Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2018-08-21T05:53:37Z |
Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer
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Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping |
| 國立交通大學 |
2018-08-21T05:53:28Z |
The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors
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Fu, Ruofan; Yang, Jianwen; Chang, Wei-Chiao; Chang, Wei-Cheng; Chang, Chien-Min; Lin, Dong; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping D. |
| 國立交通大學 |
2018-08-21T05:52:49Z |
Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions
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Qu, Mingyue; Chang, Chih-Hsiang; Meng, Ting; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping D. |
| 國立交通大學 |
2017-04-21T06:56:46Z |
Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors
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Wang Nai-Qian; Zhang Qun; Shieh Han-Ping |
| 國立交通大學 |
2017-04-21T06:56:31Z |
Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination
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Yang, Zhao; Meng, Ting; Zhang, Qun; Shieh, Han-Ping D. |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Influences of Nitrogen Doping on the Electrical Characteristics of Indium-Zinc-Oxide Thin Film Transistors
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Han, Yanbing; Yan, Hai; Tsai, Yun-Chu; Li, Yan; Zhang, Qun; Shieh, Han-Ping D. |
Showing items 1-6 of 6 (1 Page(s) Totally)
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