|
"zheng jin cheng"的相關文件
顯示項目 26-31 / 31 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立成功大學 |
2015-06 |
Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
|
Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Hsin-Lu; Su, Yu-Ting; Zhang, Rui; Hung, Ya-Chi; Syu, Yong-En; Chen, Min-Chen; Zheng, Jin-Cheng; Lin, Hua-Ching; Sze, Simon M. |
| 國立成功大學 |
2015-05-25 |
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
|
Tseng, Yi-Ting; Tsai, Tsung-Ming; Chang, Ting-Chang; Shih, Chih-Cheng; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Li, Yu-Chiuan; Lin, Chih-Yang; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2014-12-12T02:09:31Z |
複晶矽薄膜電晶體的製程與特性之研究
|
鄭金成; ZHENG, JIN-CHENG; 雷添福; 李崇仁; KEI, TIAN-FU; LI, CHONG-REN |
| 國立交通大學 |
2014-12-08T15:36:49Z |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立成功大學 |
2014-09 |
Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film
|
Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua |
| 國立臺灣大學 |
2009 |
Possible ferromagnetism in s- and sp-electron element nanowires
|
Zhu, Zi-Zhong; Zheng, Jin-Cheng; Guo, Guang-Yu |
顯示項目 26-31 / 31 (共1頁)
1
每頁顯示[10|25|50]項目
|
