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Showing items 26-37 of 37 (2 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:48:24Z |
High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2017 |
Free-breathing black-blood CINE fast-spin echo imaging for measuring abdominal aortic wall distensibility: A feasibility study
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Lin, J.-M.;Patterson, A.J.;Chao, T.-C.;Zhu, C.;Chang, H.-C.;Mendes, J.;Chung, H.-W.;Gillard, J.H.;Graves, M.J. |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology
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Chin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:47Z |
A tunable and program-erasable capacitor on Si with excellent tuning memory
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Lai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:43Z |
3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
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Yu, DS; Chin, A; Laio, CC; Lee, CF; Cheng, CF; Chen, WJ; Zhu, C; Li, MF; Yoo, WJ; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:27Z |
Strain-induced very low noise RF MOSFETs on flexible plastic substrate
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Kao, HL; Chin, A; Hung, BF; Lai, JM; Lee, CF; Li, MF; Samudra, GS; Zhu, C; Xia, ZL; Liu, XY; Kang, JF |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
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Yu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:17:29Z |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:14:22Z |
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 臺大學術典藏 |
2009 |
Theoretical treatment of anharmonic effect on molecular absorption, fluorescence spectra, and electron transfer
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Lin, S. H.; Hayashi, M.; Liang, K. K.; Zhu, C. |
| 國立成功大學 |
2007-04 |
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-02 |
High work function IrxSi gates on HfAlON p-MOSFETs
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Wu, C. H.; Yu, D. S.; Chin, Albert; Wang, Shui-Jinn; Li, M. F.; Zhu, C.; Hung, B. E.; McAlister, S. P. |
Showing items 26-37 of 37 (2 Page(s) Totally)
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