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Showing items 1-10 of 25 (3 Page(s) Totally) 1 2 3 > >> View [10|25|50] records per page
國立交通大學 |
2014-12-08T15:41:21Z |
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics
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Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB |
國立交通大學 |
2014-12-08T15:40:57Z |
High-density MIM canpacitors using AlTaOx dielectrics
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Yang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
國立交通大學 |
2014-12-08T15:40:57Z |
Fully silicided NiSi gate on La2O3 MOSFETs
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Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL |
國立交通大學 |
2014-12-08T15:40:49Z |
PVD HfO2 for high-precision MIM capacitor applications
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Kim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL |
國立交通大學 |
2014-12-08T15:40:40Z |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
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Kim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL |
國立交通大學 |
2014-12-08T15:40:17Z |
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
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Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL |
國立交通大學 |
2014-12-08T15:40:09Z |
Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process
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Chan, KT; Chin, A; Lin, YD; Chang, CY; Zhu, CX; Li, MF; Kwong, DL; McAlister, S; Duh, DS; Lin, WJ |
國立交通大學 |
2014-12-08T15:40:03Z |
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
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Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL |
國立交通大學 |
2014-12-08T15:40:03Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
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Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL |
國立交通大學 |
2014-12-08T15:39:32Z |
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
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Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
Showing items 1-10 of 25 (3 Page(s) Totally) 1 2 3 > >> View [10|25|50] records per page
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