|
|
???tair.name??? >
???browser.page.title.author???
|
"zhu cx"???jsp.browse.items-by-author.description???
Showing items 1-25 of 25 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:41:21Z |
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics
|
Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB |
| 國立交通大學 |
2014-12-08T15:40:57Z |
High-density MIM canpacitors using AlTaOx dielectrics
|
Yang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:57Z |
Fully silicided NiSi gate on La2O3 MOSFETs
|
Lin, CY; Ma, MW; Chin, A; Yeo, YC; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:49Z |
PVD HfO2 for high-precision MIM capacitor applications
|
Kim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:40Z |
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
|
Kim, SJ; Cho, BJ; Li, MF; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:17Z |
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
|
Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:09Z |
Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process
|
Chan, KT; Chin, A; Lin, YD; Chang, CY; Zhu, CX; Li, MF; Kwong, DL; McAlister, S; Duh, DS; Lin, WJ |
| 國立交通大學 |
2014-12-08T15:40:03Z |
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
|
Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:03Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
|
Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:32Z |
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
|
Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
|
Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
|
Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, BJ; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N |
| 國立交通大學 |
2014-12-08T15:39:00Z |
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
|
Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:45Z |
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
|
Zhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:36Z |
A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation
|
Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:31Z |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
|
Low, T; Li, MF; Shen, C; Yeo, YC; Hou, YT; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
|
Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:26Z |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
|
Yu, XF; Zhu, CX; Li, MF; Chin, A; Du, AY; Wang, WD; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:37:19Z |
Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
|
Wu, N; Zhang, QC; Zhu, CX; Chan, DSH; Li, MF; Balasubramanian, N; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:34:48Z |
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
|
Zhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
|
Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
|
Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:09Z |
High density RF MIM capacitors using high-kappa AlTaOx dielectrics
|
Huang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:09Z |
Microwave coplanar filters on Si substrates
|
Chan, KT; Chin, A; Kuo, JT; Chang, CY; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel program-erasable high-(K) A1N-Si MIS capacitor
|
Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL |
Showing items 1-25 of 25 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
