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Showing items 21-25 of 25 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
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Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
國立交通大學 |
2014-12-08T15:26:09Z |
High density RF MIM capacitors using high-kappa AlTaOx dielectrics
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Huang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
國立交通大學 |
2014-12-08T15:26:09Z |
Microwave coplanar filters on Si substrates
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Chan, KT; Chin, A; Kuo, JT; Chang, CY; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; Kwong, DL |
國立交通大學 |
2014-12-08T15:19:37Z |
A novel program-erasable high-(K) A1N-Si MIS capacitor
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Lai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL |
Showing items 21-25 of 25 (1 Page(s) Totally) 1 View [10|25|50] records per page
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