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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:39:16Z |
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
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Zhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:45Z |
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
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Zhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:38:27Z |
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
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Zhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:34:48Z |
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
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Zhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:55Z |
High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnology
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Chin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL |
Showing items 1-5 of 5 (1 Page(s) Totally)
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