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| 國立交通大學 |
2017-04-21T06:56:50Z |
Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
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Zou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C.; Liao, Lei |
| 國立交通大學 |
2017-04-21T06:56:41Z |
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
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Wang, Jingli; Yao, Qian; Huang, Chun-Wei; Zou, Xuming; Liao, Lei; Chen, Shanshan; Fan, Zhiyong; Zhang, Kai; Wu, Wei; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei |
| 國立交通大學 |
2016-03-28T00:04:08Z |
Low Interface Trap Densities and Enhanced Performance of AlGaN/GaNMOS High-Electron Mobility Transistors Using Thermal Oxidized Y2O3 Interlayer
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Liao, Chongnan; Zou, Xuming; Huang, Chun-Wei; Wang, Jingli; Zhang, Kai; Kong, Yuechan; Chen, Tangsheng; Wu, Wen-Wei; Xiao, Xiangheng; Jiang, Changzhong; Liao, Lei |
| 國立交通大學 |
2014-12-08T15:36:47Z |
Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
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Zou, Xuming; Wang, Jingli; Chiu, Chung-Hua; Wu, Yun; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen-Wei; Mai, Liqiang; Chen, Tangsheng; Li, Jinchai; Ho, Johnny C.; Liao, Lei |
Showing items 1-4 of 4 (1 Page(s) Totally)
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