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Showing items 1-19 of 19 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:48:54Z |
Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique
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Wang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM |
| 國立交通大學 |
2014-12-08T15:48:47Z |
Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique
|
Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C |
| 國立交通大學 |
2014-12-08T15:46:18Z |
Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides
|
Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:46:14Z |
A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's
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Wang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices
|
Wang, TH; Zous, NK; Yeh, CC |
| 國立交通大學 |
2014-12-08T15:39:34Z |
Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell
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Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:39:14Z |
An endurance evaluation method for flash EEPROM
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Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:52Z |
Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell
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Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:38:37Z |
Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology
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Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:27:30Z |
A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET
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Wang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:29Z |
Investigation of oxide charge trapping and detrapping in a n-MOSFET
|
Wang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:27Z |
Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique
|
Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C |
| 國立交通大學 |
2014-12-08T15:27:15Z |
Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET
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Wang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:09Z |
A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
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Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique
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Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:19:37Z |
A novel fully CMOS process compatible PREM for SOC applications
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Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY |
| 國立交通大學 |
2014-12-08T15:17:01Z |
A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming
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Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY |
| 國立交通大學 |
2014-12-08T15:01:31Z |
Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient
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Chiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C |
Showing items 1-19 of 19 (1 Page(s) Totally)
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