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Showing items 11-19 of 19  (2 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:27:30Z A new technique to measure an oxide trap density in a hot carrier stressed n-MOSFET Wang, TH; Chiang, LP; Chang, TE; Zous, NK; Shen, KY; Huang, C
國立交通大學 2014-12-08T15:27:29Z Investigation of oxide charge trapping and detrapping in a n-MOSFET Wang, TH; Chang, TE; Chiang, LP; Zous, NK; Huang, C
國立交通大學 2014-12-08T15:27:27Z Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C
國立交通大學 2014-12-08T15:27:15Z Voltage scaling and temperature effects on drain leakage current degradation in a hot carrier stressed n-MOSFET Wang, TH; Hsu, CF; Chiang, LP; Zous, NK; Chao, TS; Chang, CY
國立交通大學 2014-12-08T15:27:09Z A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM
國立交通大學 2014-12-08T15:25:47Z Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:19:37Z A novel fully CMOS process compatible PREM for SOC applications Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY
國立交通大學 2014-12-08T15:17:01Z A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming Tsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY
國立交通大學 2014-12-08T15:01:31Z Field and temperature effects on oxide charge detrapping in a metal-oxide-semiconductor field effect transistor by measuring a subthreshold current transient Chiang, LP; Zous, NK; Wang, TH; Chang, TE; Shen, KY; Huang, C

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