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机构 日期 题名 作者
國立交通大學 2014-12-08T15:48:54Z Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique Wang, TH; Chang, TE; Chiang, LP; Wang, CH; Zous, NK; Huang, CM
國立交通大學 2014-12-08T15:48:47Z Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique Wang, TH; Chiang, LP; Zous, NK; Chang, TE; Huang, C
國立交通大學 2014-12-08T15:46:18Z Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides Zous, NK; Wang, TH; Yeh, CC; Tsai, CW; Huang, CM
國立交通大學 2014-12-08T15:46:14Z A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's Wang, TH; Chiang, LP; Zous, NK; Hsu, CF; Huang, LY; Chao, TS
國立交通大學 2014-12-08T15:41:47Z Role of positive trapped charge in stress-induced leakage current for flash EEPROM devices Wang, TH; Zous, NK; Yeh, CC
國立交通大學 2014-12-08T15:39:34Z Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell Tsai, WJ; Yeh, CC; Zous, NK; Liu, CC; Cho, SK; Wang, TH; Pan, SC; Lu, CY
國立交通大學 2014-12-08T15:39:14Z An endurance evaluation method for flash EEPROM Zous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY
國立交通大學 2014-12-08T15:38:52Z Temperature effect on read current in a two-bit nitride-based trapping storage flash EEPROM cell Liu, MY; Chang, YW; Zous, NK; Yang, I; Lu, TC; Wang, TH; Ting, WC; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:38:37Z A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cell Yeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY
國立交通大學 2014-12-08T15:38:37Z Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology Zous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY

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