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顯示項目 1996286-1996295 / 2348904 (共234891頁) << < 199624 199625 199626 199627 199628 199629 199630 199631 199632 199633 > >> 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T08:17:48Z |
Au Nanorings for Contrast-enhanced Imaging with Optical Coherence Tomography and Photothermal Therapy
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Ting-Ta Chi; Meng-Tsan Tsai; Jyh-Yang Wang; Yean-Woei Kiang; C. C. Yang; YEAN-WOEI KIANG; Cheng-Kuang Lee;Hung-Yu Tseng;Shou-Yen Wu;Ting-Ta Chi;Meng-Tsan Tsai;Jyh-Yang Wang;Yean-Woei Kiang;C. C. Yang; Cheng-Kuang Lee; Hung-Yu Tseng; Shou-Yen Wu |
| 臺大學術典藏 |
2018-09-10T08:17:48Z |
In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor
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Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy
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H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
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T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy
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Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy
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S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Optical properties of As-rich InAsSb/InAsPSb multiple quantum well
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C. J. Wu,;G. Tsai,;H. H. Lin; C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Raman scattering in InAsPSb quaternary alloys
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J. S. Tzeng,;C. J. Wu,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy
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Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
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J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
顯示項目 1996286-1996295 / 2348904 (共234891頁) << < 199624 199625 199626 199627 199628 199629 199630 199631 199632 199633 > >> 每頁顯示[10|25|50]項目
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