| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Band calculation of lonsdaleite Ge
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Chen P.-S;Fan S.-T;Lan H.-S;Liu C.W.; Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well
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Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs
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Lee M.H;Lin Y.-Y;Yang Y.-J;Hsieh F.-C;Chang S.T;Liao M.-H;Li K.-S;Liu C.W;Chen K.-T;Liao C.-Y;Siang G.-Y;Lo C;Chen H.-Y;Tseng Y.-J;Chueh C.-Y;Chang C.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition
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Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation
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Yan J.-Y;Chung C.-C;Jan S.-R;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
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Lu T.M;Tracy L.A;Laroche D;Huang S.-H;Chuang Y;Su Y.-H;Li J.-Y;Liu C.W.; Lu T.M; Tracy L.A; Laroche D; Huang S.-H; Chuang Y; Su Y.-H; Li J.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors
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Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications
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Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability
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Li S.-L;Lee M.-X;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Energy preference of uniform polarization switching for HfO2 by first-principle study
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Chen Y.-W;Fan S.-T;Liu C.W.; Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Ferroelectric Al:HfO2 negative capacitance FETs
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Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Effective g factor of low-density two-dimensional holes in a Ge quantum well
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Lu T.M;Harris C.T;Huang S.-H;Chuang Y;Li J.-Y;Liu C.W.; Lu T.M; Harris C.T; Huang S.-H; Chuang Y; Li J.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
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Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
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Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching
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Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V
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Tu C.-T;Huang Y.-S;Lu F.-L;Liu H.-H;Lin C.-Y;Liu Y.-C;Liu C.W.; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
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Galluccio E;Petkov N;Mirabelli G;Doherty J;Lin S.-Y;Lu F.-L;Liu C.W;Holmes J.D;Duffy R.; Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields
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Dolgopolov V.T;Melnikov M.Y;Shashkin A.A;Huang S.-H;Liu C.W;Kravchenko S.V.; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
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Huang Y.-S;Tsou Y.-J;Huang C.-H;Huang C.-H;Lan H.-S;Liu C.W;Huang Y.-C;Chung H;Chang C.-P;Chu S.S;Kuppurao S.; Huang Y.-S; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Indication of band flattening at the Fermi level in a strongly correlated electron system
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Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:55Z |
Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack
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Huang C.-H;Huang Y.-S;Chang D.-Z;Lin T.-Y;Liu C.W.; Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:56Z |
Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry
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Chung C.-C;Lin H.-C;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Chung C.-C; Lin H.-C; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
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Melnikov M.Y;Shashkin A.A;Dolgopolov V.T;Huang S.-H;Liu C.W;Zhu A.Y.X;Kravchenko S.V.; Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Zhu A.Y.X; Kravchenko S.V.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:57Z |
Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers
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Yen C.-C;Tai A.-H;Liu Y.-C;Yeh C.-H;Liu C.W.; Yen C.-C; Tai A.-H; Liu Y.-C; Yeh C.-H; Liu C.W.; CHEE-WEE LIU |
