| 朝陽科技大學 |
2021-12-30 |
自動資源回收系統
|
林育全;鍾沛芹 |
| 朝陽科技大學 |
2021-12-30 |
「個人即時生理狀況雲守護-以心率、血氧為例」
|
陳則宇;吳得弘 |
| 朝陽科技大學 |
2021-12-30 |
低功率晶片設計
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吳俊霆;劉尚義;潘炫勳;郭政岳 |
| 國立成功大學 |
2021-12-30 |
Iron-concentration adjusted Multi-Metal oxides for optimized oxygen evolution reaction performance
|
Nguyen;Xuyen, Thi;Huang;Zi-Ting;Ting;Jyh-Ming |
| 淡江大學 |
2021-12-30 |
Keepers of the Grave: Ritual Guides, Ghosts, and Hidden Narratives in Indonesian History
|
梁家恩 |
| 淡江大學 |
2021-12-30 |
Evidence of synergistic electrocatalysis at a cobalt oxide–graphene interface through nanochemical mapping of scanning transmission X-ray microscopy
|
Chuang, Cheng-hao |
| 國立成功大學 |
2021-12-30 |
低溫式空氣污染防制系統
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吳重霖 WU, JHONG LIN;黃俊榮 HUANG, JUN RONG;林聖倫 LIN, SHENG LUN |
| 臺大學術典藏 |
2021-12-30T03:01:56Z |
strained Pt Schottky diodes on n-type Si and Ge
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M. H. Liao; P.-S. Kuo; S.-R. Jan; S.-T. Chang; C. W. Liu; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:57Z |
Optimal Si-SiGe hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis
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M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:57Z |
Local stress determination in Shallow Trench Insulator structures with one-side and two-sides Pad-SiN layer by Polarized micro-Raman spectroscopy extraction and mechanical modelization
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
Local stress determination in shallow trench insulator structures with one side and two sides pad SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization
|
M. H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes
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M. H. Liao; C.-Y. Yu; T.-H. Guo; C.-H. Lin; C. W. Liu; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
The Systematic Study and Simulation Modeling on Dislocation Edge Stress Effects for Si N-MOSFETs
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:58Z |
A Novel Stress Design for the Type-II Hetero-Junction Solar Cell with Superior Performance
|
M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:59Z |
The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs
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M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:59Z |
The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
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M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:01:59Z |
The Dependence of the Performance of Strained NMOSFETs on Channel Width
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Lingyen Yeh; Ming Han Liao; Chun Heng Chen; Jun Wu; Joseph Ya-min Lee; Chee Wee Liu; T. L. Lee; M. S. Liang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:00Z |
The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors
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C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:00Z |
Studies of boron diffusivities on (001) and (110) substrate orientation in Si and Ge along vertical/out-of plane and lateral/in-plane directions by SIMS and C-V measurement on the designed test pattern
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M.-H. Liao; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:00Z |
The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design
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M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:01Z |
SiGe/Si Quantum-Dot Infrared Photodetectors With δ Doping
|
Chu-Hsuan Lin; MING-HAN LIAO et al. |
| 臺大學術典藏 |
2021-12-30T03:02:01Z |
SiGe Quantum Well Metal-Insulator-Semiconductor Light-Emitting Diodes
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M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:01Z |
Strain Engineering of Nanoscale Strained Si MOS Devices
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B.-F. Hsieh; S. T. Chang; W.-C.Wang; M.-H. Liao; C.-C. Lee; J. Huang; MING-HAN LIAO |
| 臺大學術典藏 |
2021-12-30T03:02:02Z |
Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF <0.2V, and Hysteresis-Free Strategies
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M. H. Lee; MING-HAN LIAO et al. |
| 臺大學術典藏 |
2021-12-30T03:02:02Z |
Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications
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K.-T. Chen; H.-Y. Chen; C.-Y. Liao; G.-Y. Siang; C. Lo; M.-H. Liao; K.-S. Li; S. T. Chang; M.-H. Lee; MING-HAN LIAO |
