| 臺大學術典藏 |
2021-09-02T00:03:47Z |
Establishment of an immunocompetent metastasis rat model with hepatocyte cancer stem cells
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Wu S;Tseng I.-C;Huang W.-C;Su C.-W;Lai Y.-H;Lin C;Lee A.Y.-L;Kuo C.-Y;Su L.-Y;Lee M.-C;Hsu T.-C;Yu C.-H.; Wu S; CHE LIN et al. |
| 臺大學術典藏 |
2021-09-02T00:03:47Z |
A Hybrid DQN and Optimization Approach for Strategy and Resource Allocation in MEC Networks
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Wu Y;Dinh T.Q;Fu Y;Lin C;Quek T.Q.S.; Wu Y; Dinh T.Q; Fu Y; Lin C; Quek T.Q.S.; CHE LIN |
| 臺大學術典藏 |
2021-09-02T00:03:48Z |
Functional Characterization of Insulation Effect for Synthetic Gene Circuits in Mammalian Cells
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Liao W;Liu B;Chang C.-C;Lin L.-J;Lin C;Chen B.-S;Xie Z.; Liao W; Liu B; Chang C.-C; Lin L.-J; Lin C; Chen B.-S; Xie Z.; CHE LIN |
| 臺大學術典藏 |
2021-09-02T00:03:48Z |
Generative Adversarial Networks for Robust Breast Cancer Prognosis Prediction with Limited Data Size
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Hsu T.-C;Lin C.; Hsu T.-C; Lin C.; CHE LIN |
| 臺大學術典藏 |
2021-09-02T00:03:48Z |
STAT3 phosphorylation at Ser727 and Tyr705 differentially regulates the EMT–MET switch and cancer metastasis
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Lin W.-H;Chang Y.-W;Hong M.-X;Hsu T.-C;Lee K.-C;Lin C;Lee J.-L.; Lin W.-H; Chang Y.-W; Hong M.-X; Hsu T.-C; Lee K.-C; Lin C; Lee J.-L.; CHE LIN |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Stock Movement Prediction That Integrates Heterogeneous Data Sources Using Dilated Causal Convolution Networks with Attention
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Daiya D;Wu M.-S;Lin C.; Daiya D; Wu M.-S; Lin C.; CHE LIN |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces
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Lan H.-S;Liu C.W.; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2
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Fan S.-T;Chen Y.-W;Chen P.-S;Liu C.W.; Fan S.-T; Chen Y.-W; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:49Z |
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
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Bussmann E;Gamble J.K;Koepke J.C;Laroche D;Huang S.H;Chuang Y;Li J.-Y;Liu C.W;Swartzentruber B.S;Lilly M.P;Carroll M.S;Lu T.-M.; Bussmann E; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Band calculation of lonsdaleite Ge
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Chen P.-S;Fan S.-T;Lan H.-S;Liu C.W.; Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well
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Lin C.-Y;Ye H.-Y;Lu F.-L;Lan H.S;Liu C.W.; Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs
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Lee M.H;Lin Y.-Y;Yang Y.-J;Hsieh F.-C;Chang S.T;Liao M.-H;Li K.-S;Liu C.W;Chen K.-T;Liao C.-Y;Siang G.-Y;Lo C;Chen H.-Y;Tseng Y.-J;Chueh C.-Y;Chang C.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:50Z |
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition
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Tsai C.-E;Lu F.-L;Chen P.-S;Liu C.W.; Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation
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Yan J.-Y;Chung C.-C;Jan S.-R;Lin H.H;Wan W.K;Yang M.-T;Liu C.W.; Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
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Lu T.M;Tracy L.A;Laroche D;Huang S.-H;Chuang Y;Su Y.-H;Li J.-Y;Liu C.W.; Lu T.M; Tracy L.A; Laroche D; Huang S.-H; Chuang Y; Su Y.-H; Li J.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors
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Liu H.-H;Huang Y.-S;Lu F.-L;Ye H.-Y;Liu C.W.; Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications
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Lu F.-L;Tsai C.-E;Wong I.-H;Lu C.-T;Liu C.W.; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:51Z |
Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability
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Li S.-L;Lee M.-X;Yen C.-C;Chen T.-L;Chou C.-H;Liu C.W.; Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Energy preference of uniform polarization switching for HfO2 by first-principle study
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Chen Y.-W;Fan S.-T;Liu C.W.; Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Ferroelectric Al:HfO2 negative capacitance FETs
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Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Effective g factor of low-density two-dimensional holes in a Ge quantum well
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Lu T.M;Harris C.T;Huang S.-H;Chuang Y;Li J.-Y;Liu C.W.; Lu T.M; Harris C.T; Huang S.-H; Chuang Y; Li J.-Y; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels
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Huang Y.-S;Lu F.-L;Tu C.-T;Chen J.-Y;Tsai C.-E;Ye H.-Y;Liu Y.-C;Liu C.; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; Liu C.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:53Z |
First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping
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Huang Y.-S;Tsai C.-E;Tu C.-T;Chen J.-Y;Ye H.-Y;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise
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Huang Y.-S;Tsai C.-E;Tu C.-T;Ye H.-Y;Liu Y.-C;Lu F.-L;Liu C.W.; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2021-09-02T00:03:54Z |
First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching
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Huang Y.-S;Lu F.-L;Tsou Y.-J;Tsai C.-E;Lin C.-Y;Huang C.-H;Liu C.W.; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU |
